Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2017, Article ID 4705734, 6 pages
https://doi.org/10.1155/2017/4705734
Research Article

Properties of Hydrogenated Nanoporous SiC: An Ab Initio Study

1Department of Physics, Penn State Behrend, Erie, PA 16563, USA
2Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA
3Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA

Correspondence should be addressed to Blair R. Tuttle; ude.usp@01trb

Received 4 November 2016; Accepted 20 December 2016; Published 10 January 2017

Academic Editor: Victor M. Castaño

Copyright © 2017 Blair R. Tuttle et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. W. Volksen, R. D. Miller, and G. Dubois, “Low dielectric constant materials,” Chemical Reviews, vol. 110, no. 1, pp. 56–110, 2010. View at Publisher · View at Google Scholar · View at Scopus
  2. A. Grill, S. M. Gates, T. E. Ryan, S. V. Nguyen, and D. Priyadarshini, “Progress in the development and understanding of advanced low k and ultralow k dielectrics for very large-scale integrated interconnects—state of the art,” Applied Physics Reviews, vol. 1, no. 1, Article ID 011306, 2014. View at Publisher · View at Google Scholar · View at Scopus
  3. S. W. King, H. Simka, D. Herr, H. Akinaga, and M. Garner, “Research updates: the three M's (materials, metrology, and modeling) together pave the path to future nanoelectronic technologies,” APL Materials, vol. 1, no. 4, Article ID 040701, 2013. View at Publisher · View at Google Scholar · View at Scopus
  4. C. Guthy, R. M. Das, B. Drobot, and S. Evoy, “Resonant characteristics of ultranarrow SiCN nanomechanical resonators,” Journal of Applied Physics, vol. 108, no. 1, Article ID 014306, 2010. View at Publisher · View at Google Scholar · View at Scopus
  5. B. Elyassi, M. Sahimi, and T. T. Tsotsis, “Silicon carbide membranes for gas separation applications,” Journal of Membrane Science, vol. 288, no. 1-2, pp. 290–297, 2007. View at Publisher · View at Google Scholar · View at Scopus
  6. N. Rajabbeigi, B. Elyassi, T. T. Tsotsis, and M. Sahimi, “Molecular pore-network model for nanoporous materials. I: application to adsorption in silicon-carbide membranes,” Journal of Membrane Science, vol. 335, no. 1, pp. 5–12, 2009. View at Publisher · View at Google Scholar
  7. J.-M. Hsu, P. Tathireddy, L. Rieth, A. R. Normann, and F. Solzbacher, “Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices,” Thin Solid Films, vol. 516, no. 1, pp. 34–41, 2007. View at Publisher · View at Google Scholar · View at Scopus
  8. E. Van Besien, M. Pantouvaki, L. Zhao et al., “Influence of porosity on electrical properties of low-k dielectrics,” Microelectronic Engineering, vol. 92, pp. 59–61, 2012. View at Publisher · View at Google Scholar · View at Scopus
  9. T. A. Pomorski, B. C. Bittel, C. J. Cochrane, P. M. Lenahan, J. Bielefeld, and S. W. King, “Defects and electronic transport in hydrogenated amorphous SiC films of interest for low dielectric constant back end of the line dielectric systems,” Journal of Applied Physics, vol. 114, no. 7, Article ID 074501, 2013. View at Publisher · View at Google Scholar · View at Scopus
  10. S. W. King, D. Jacob, D. Vanleuven et al., “Film property requirements for hermetic low-k a-SiOxC yNz:H dielectric barriers,” ECS Journal of Solid State Science and Technology, vol. 1, no. 6, pp. N115–N122, 2012. View at Publisher · View at Google Scholar · View at Scopus
  11. S. W. King, M. French, J. Bielefeld, and W. A. Lanford, “Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films,” Journal of Non-Crystalline Solids, vol. 357, no. 15, pp. 2970–2983, 2011. View at Publisher · View at Google Scholar · View at Scopus
  12. S. King and J. Bielefeld, “Rigidity percolation in plasma enhanced chemical vapor deposited a-SiC:H thin films,” ECS Transactions, vol. 33, p. 185, 2010. View at Google Scholar
  13. B. C. Bittel, P. M. Lenahan, and S. W. King, “Ultraviolet radiation effects on paramagnetic defects in low-κ dielectrics for ultralarge scale integrated circuit interconnects,” Applied Physics Letters, vol. 97, no. 6, Article ID 063506, 2010. View at Publisher · View at Google Scholar
  14. M. Calvino, A. Trejo, M. C. Crisóstomo, M. I. Iturrios, E. Carvajal, and M. Cruz-Irisson, “Modeling the effects of Si-X (X = F, Cl) bonds on the chemical and electronic properties of Si-surface terminated porous 3C-SiC,” Theoretical Chemistry Accounts, vol. 135, no. 4, article 104, 2016. View at Publisher · View at Google Scholar · View at Scopus
  15. M. Calvino, A. Trejo, M. I. Iturrios, M. C. Crisóstomo, E. Carvajal, and M. Cruz-Irisson, “DFT study of the electronic structure of cubic-sic nanopores with a C-terminated surface,” Journal of Nanomaterials, vol. 2014, Article ID 471351, 7 pages, 2014. View at Publisher · View at Google Scholar · View at Scopus
  16. G. Kresse and J. Hafner, “Ab initio molecular dynamics for liquid metals,” Physical Review B, vol. 47, no. 1, pp. 558–561, 1993. View at Publisher · View at Google Scholar · View at Scopus
  17. G. Kresse and J. Furthmüller, “Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set,” Physical Review B, vol. 54, no. 16, pp. 11169–11186, 1996. View at Publisher · View at Google Scholar · View at Scopus
  18. G. Kresse and D. Joubert, “From ultrasoft pseudopotentials to the projector augmented-wave method,” Physical Review B, vol. 59, no. 3, pp. 1758–1775, 1999. View at Publisher · View at Google Scholar · View at Scopus
  19. P. E. Blöchl, “Projector augmented-wave method,” Physical Review B, vol. 50, no. 24, pp. 17953–17979, 1994. View at Publisher · View at Google Scholar · View at Scopus
  20. S. W. King, L. Ross, H. Li et al., “Influence of hydrogen content and network connectivity on the coefficient of thermal expansion and thermal stability for a-SiC:H thin films,” Journal of Non-Crystalline Solids, vol. 389, pp. 78–85, 2014. View at Publisher · View at Google Scholar
  21. M. J. Puska and R. M. Nieminen, “Theory of positrons in solids and on solid surfaces,” Reviews of Modern Physics, vol. 66, no. 3, article 841, 1994. View at Publisher · View at Google Scholar · View at Scopus
  22. D. V. Makhov and L. J. Lewis, “Two-component density functional theory calculations of positron lifetimes for small vacancy clusters in silicon,” Physical Review B, vol. 71, no. 20, Article ID 205215, 2005. View at Publisher · View at Google Scholar
  23. Z. Wu, Z. Shiung, C. Chiang et al., “Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxides,” Journal of The Electrochemical Society, vol. 148, no. 6, pp. F127–F132, 2001. View at Publisher · View at Google Scholar
  24. L. Börnstein, “Numerical data and functional relationships in science and technology, group iii: crystal and solid state physics, Vol. 13: metals: phonon states, electron states and fermi surfaces, subvolume a, phonon states of elements, electron states and fermi surfaces of alloys,” Crystal Research and Technology, vol. 17, no. 3, p. 326, 1982. View at Publisher · View at Google Scholar