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Journal of Nanomaterials
Volume 2017, Article ID 4794956, 7 pages
Research Article

Deviation from Regular Shape in the Early Stages of Formation of Strain-Driven 3D InGaAs/GaAs Micro/Nanotubes

IMEM-CNR, Institute of Materials for Electronics and Magnetism, Parco Area delle Scienze 37/A, 43124 Parma, Italy

Correspondence should be addressed to Giovanna Trevisi; ti.rnc.memi@isivert.annavoig

Received 6 March 2017; Revised 17 May 2017; Accepted 4 July 2017; Published 8 August 2017

Academic Editor: Leander Tapfer

Copyright © 2017 Paola Frigeri et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Single-crystalline InGaAs/GaAs semiconductor micro/nanotubes have been obtained by the strain-driven self-rolling mechanism. This approach combines the advantages of bottom-up (epitaxial growth) and top-down (postgrowth processing) techniques, offering an exceptional opportunity to realize complex three-dimensional nanoarchitectures by using conventional photolithography and wet-etching processes. The method employed to obtain micro/nanotubes with selected orientation and length is described in detail. By means of high-resolution scanning electron microscopy characterization, we show a clear shape difference between single-wall and multiwalls tubes and we discuss it on the basis of strain release, taking into account also possible shape deformations induced during micro/nanotubes drying. We analyse the In-segregation profile in the nominal In0.20Ga0.80As/GaAs bilayer and we show its effect on the actual diameter of the tubes, concluding that a more accurate description of the structure should consider an In0.20Ga0.80As/In0.10Ga0.90As/GaAs trilayer. This work will be useful to set up reliable methodologies for the realization of strain-driven micro/nanotubes with controlled properties, necessary for their implementation in a large number of application fields.