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Journal of Nanomaterials
Volume 2017, Article ID 4815251, 12 pages
Research Article

Tunable SnO2 Nanoribbon by Electric Fields and Hydrogen Passivation

School of Physics, University of Jinan, Jinan 250022, China

Correspondence should be addressed to Pei-Ji Wang; nc.ude.nju@jpgnaw_ss

Received 12 December 2016; Accepted 22 February 2017; Published 20 March 2017

Academic Editor: Shu Seki

Copyright © 2017 Xin-Lian Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Under external transverse electronic fields and hydrogen passivation, the electronic structure and band gap of tin dioxide nanoribbons (SnO2NRs) with both zigzag and armchair shaped edges are studied by using the first-principles projector augmented wave (PAW) potential with the density function theory (DFT) framework. The results showed that the electronic structures of zigzag and armchair edge SnO2NRs exhibit an indirect semiconducting nature and the band gaps demonstrate a remarkable reduction with the increase of external transverse electronic field intensity, which demonstrate a giant Stark effect. The value of the critical electric field for bare Z-SnO2NRs is smaller than A-SnO2NRs. In addition, the different hydrogen passivation nanoribbons (Z-SnO2NRs-2H and A-SnO2NRs-OH) show different band gaps and a slightly weaker Stark effect. The band gap of A-SnO2NRs-OH obviously is enhanced while the Z-SnO2NRs-2H reduce. Interestingly, the Z-SnO2NRs-OH presented the convert of metal-semiconductor-metal under external transverse electronic fields. In the end, the electronic transport properties of the different edges SnO2NRs are studied. These findings provide useful ways in nanomaterial design and band engineering for spintronics.