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Journal of Nanomaterials
Volume 2017, Article ID 5204639, 10 pages
https://doi.org/10.1155/2017/5204639
Research Article

Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

1Laboratory VTRS, Faculty of Exact Sciences, El Oued University, 39000 El Oued, Algeria
2Faculty of Mathematics and Material Sciences, University of Ouargla, 30000 Ouargla, Algeria
3Laboratoire de Microscopie Electronique & Sciences des Matériaux, USTO-MB, BP 1505 El MNaouer, Oran, Algeria

Correspondence should be addressed to Boubaker Benhaoua; rf.oohay@bauoahneb

Received 1 February 2017; Accepted 11 April 2017; Published 10 May 2017

Academic Editor: Victor M. Castaño

Copyright © 2017 Rafia Barir et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Undoped nickel oxide (NiO) thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M) range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD) shows the formation of NiO under cubic structure with single diffraction peak along (111) plane at . When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.