Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

Table 3

Values of thickness t, average transmittance, optical band gap energy , and Urbach energy of NiO thin films prepared at 500°C with different of precursor concentration.

Precursor concentration; (M)	Thickness; (nm)	Average transmittance; (%)	Gap energy; (eV)	Urbach energy; (meV)
0.015	181.57	88.30	3.68	309.40
0.03	191.66	71.01	3.62	365.76
0.04	170.36	57.56	3.60	394.36
0.05	190.34	64.28	3.64	400.16
0.1	200.00	51.66	3.56	453.72