Donor Impurity-Related Optical Absorption in GaAs Elliptic-Shaped Quantum Dots

Figure 2

(a, b) Energy of the first ten confined-electron states in an elliptical GaAs quantum dot as a function of the horizontal semilength () of the structure for two different values of the vertical length : (a) and (b). In (c) and (d) the corresponding results including the effects of on-center donor impurity are depicted. The results are for zero electric field. A constant dot-height of has been considered. In (a) the open symbols correspond to calculations using a diagonalization method. In (c) the full symbols correspond to theoretical calculations considering the 3D-character of the electron-impurity distance and using a variational procedure [15–17].

(a)

(b)

(c)

(d)