Donor Impurity-Related Optical Absorption in GaAs Elliptic-Shaped Quantum Dots

Figure 3

(a, b) Energy of the first ten confined-electron states in an elliptical GaAs quantum dot as a function of the impurity position along the -direction (a, c) and -direction (b, d). The results are for and for zero applied electric field (a, b), kV/cm (c), and kV/cm (d). A constant dot-height of has been considered.

(a)

(b)

(c)

(d)