Research Article
Relative Humidity Dependent Resistance Switching of Bi2S3 Nanowires
Figure 1
Electrical characterization of individual Bi2S3 nanowires: (a) SEM image of connected Bi2S3 nanowire (–80 nm); (b) IVC of Bi2S3 nanowire with nonlinear dependence; solid fit corresponds to simulated IVC with two reverse Schottky barriers; extracted Schottky barrier height eV; relative humidity level = 5%.
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