Review Article
The Effects of Heteroatom Adsorption on the Electronic Properties of Phosphorene
Table 1
Fundamental properties of different 2D materials [
19].
| Type | Phosphorene | Graphene | MoS2 | WSe2 | -BN | Semiconductor | Semimetal | Semiconductor | Semiconductor | Insulator |
| Bandgap (eV) | 0.3–2.0 | 0 | 1.2–1.8 | 1.2–1.7 | 5.9 | Carrier mobility, (cm2V−1s−1) | 1000 | 2 × 105 | 10–200 | 140–500 | — | On/off ratio | 103–105 | 5.5–44 | 106–108 | 104–106 | — | Thermal conductance (Wm−1K−1) | 10–36 | 5 × 103 | 34.5–52 | 9.7 | 250–360 | Thermoelectric performance, ZT | 1–2.5 | 0 | 0.4 | 0.91 | — | Young’s modulus (GPa) | 35–166 | 1000 | 270 100 | 75–195 | 220–880 | Fracture strain (%) | 24–32 | 27–38 | 25–33 | 26–37 | 24 | Conduction type | Ambipolar | Ambipolar | n-type | Ambipolar | — |
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