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Journal of Nanomaterials
Volume 2017 (2017), Article ID 9298637, 8 pages
https://doi.org/10.1155/2017/9298637
Research Article

Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

1Department of Physics, Pontifical Catholic University of Rio de Janeiro, 22451-900 Rio de Janeiro, RJ, Brazil
2MackGraphe, Mackenzie Presbyterian University, 01302-907 São Paulo, SP, Brazil
3Department of Computer Science, University of Verona, 37134 Verona, Italy

Correspondence should be addressed to F. L. Freire Jr.; moc.liamg@cup.orazal

Received 16 March 2017; Accepted 18 May 2017; Published 13 June 2017

Academic Editor: Zafar Iqbal

Copyright © 2017 E. C. Romani et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000°C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000°C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.