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Journal of Nanomaterials
Volume 2017, Article ID 9298637, 8 pages
https://doi.org/10.1155/2017/9298637
Research Article

Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

1Department of Physics, Pontifical Catholic University of Rio de Janeiro, 22451-900 Rio de Janeiro, RJ, Brazil
2MackGraphe, Mackenzie Presbyterian University, 01302-907 São Paulo, SP, Brazil
3Department of Computer Science, University of Verona, 37134 Verona, Italy

Correspondence should be addressed to F. L. Freire Jr.; moc.liamg@cup.orazal

Received 16 March 2017; Accepted 18 May 2017; Published 13 June 2017

Academic Editor: Zafar Iqbal

Copyright © 2017 E. C. Romani et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

E. C. Romani, D. G. Larrude, M. E. H. Maia da Costa, G. Mariotto, and F. L. Freire, Jr., “Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor,” Journal of Nanomaterials, vol. 2017, Article ID 9298637, 8 pages, 2017. https://doi.org/10.1155/2017/9298637.