Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

<div>Raman spectra obtained from samples prepared under pressure of 25 mTorr at three different temperatures and transferred to SiO<sub>2</sub>/Si via PMMA route.</div>

Journal of Nanomaterials

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Figure 1

Figure 1: Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor 