Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

<div>Raman spectra obtained from samples prepared at different pressures for 5 minutes at 1000°C and transferred to SiO<sub>2</sub>/Si via PMMA route.</div>

Journal of Nanomaterials

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Figure 2

Figure 2: Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor 