Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

<div>(a) Optical microscopy image of doped graphene prepared at 75 mTorr, 1000°C, and 5 minutes and transferred to a SiO<sub>2</sub>/Si substrate. (b) UV-vis transmittance of quartz substrate, pristine graphene, and doped graphene of a sample prepared with the same parameters and transferred to a quartz substrate.</div>

Journal of Nanomaterials

fig3

Figure 3

Figure 3: Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor 