Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

Figure 6

XPS B1s core-level spectrum of the samples grown using Cu substrate exposed during 5 minutes at 1000°C to (a) 200 mTorr, (b) 75 mTorr, and (c) 50 mTorr of triisopropyl borate vapor.

(a)

(b)

(c)