Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

Table 1

XPS results of the samples prepared by CVD using Cu substrate exposed during 5 minutes to different vapor pressures of triisopropyl borate at 1000°C.

	Boron	BC3	BCO2	BC2O	B2O3	B4C
	(at.%)	(at.%)	(at.%)	(at.%)	(at.%)	(at.%)
50 mTorr		0.6	0.3	—	0.5	—
75 mTorr		0.4	0.5	—	—	—
200 mTorr		0.4	—	1.5	0.6	—