Research Article

Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon

Figure 2

SEM images of the samples anodized at different current densities in 360 min at 0.5 mA/cm2 (a), 1 mA/cm2 (b), and 2 mA/cm2 (c).
(a)
(b)
(c)