Research Article
Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon
Figure 4
In situ fast I-V measurements at 90 minutes during pore formation using anodizing current of 0.5 mA/cm2 (a), 1 mA/cm2 (b), and 2 mA/cm2 (c).
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| (b) |
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