Research Article
Advanced In Situ I-V Measurements Used in the Study of Porous Structures Growth on Silicon
Figure 5
SEM images of the samples anodized for 120 min at 4 mA/cm2 (a), 15 mA/cm2 (b), 20 mA/cm2 (c), and 25 mA/cm2 (d). The first three images, with insets of surface view, show nanopores ((a), (b), and (c)), while the last (d) shows electropolishing.
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