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Journal of Nanomaterials
Volume 2018, Article ID 1243685, 11 pages
https://doi.org/10.1155/2018/1243685
Research Article

Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon

1Institute of Physics, National Academy of Sciences of Ukraine, Nauky Ave. 46, Kyiv 03028, Ukraine
2V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Nauky Ave. 41, Kyiv 03028, Ukraine
3Faculty of Physics, Taras Shevchenko National University of Kyiv, Volodymyrska Str. 64/13, Kyiv 01601, Ukraine

Correspondence should be addressed to V. B. Neimash; moc.liamg@hsamien and A. O. Goushcha; ten.xoc@ahchsuog

Received 11 November 2017; Revised 7 January 2018; Accepted 22 January 2018; Published 19 February 2018

Academic Editor: Bo Tan

Copyright © 2018 V. B. Neimash et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

V. B. Neimash, A. O. Goushcha, L. L. Fedorenko, et al., “Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon,” Journal of Nanomaterials, vol. 2018, Article ID 1243685, 11 pages, 2018. https://doi.org/10.1155/2018/1243685.