Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon
(a) Calculated distribution of thermal sources over the depth of the structure Si-Sn-Si. (b) Temperature changes of the sample surface with time. (c) Temperature distribution at the surface of a sample at . Irradiation with 10 ns duration; 1 MW/cm2 laser pulses at 1064 nm (black solid lines) and 532 nm (dashed green line).
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