Role of Laser Power, Wavelength, and Pulse Duration in Laser Assisted Tin-Induced Crystallization of Amorphous Silicon
(a) Calculated surface temperature rise for irradiated samples during the laser pulse action (first 150 μs of the time scale in -axis) and immediately after cessation of the irradiation. (b) Distribution of the temperature rise over the depth of a sample immediately after cessation of the laser irradiation.
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