Research Article
Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric
Figure 3
Comparison of (a) transfer characteristics (VBG-IDS) under VDS = −1 V and (b) output characteristics (VDS-IDS) under VBG = 3 ~ −3 V for Al-ZrHfO2 and Al2O3 CNT FET devices.
| (a) |
| (b) |