Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO<sub>2</sub> Gate Dielectric

<div>(a) Hysteresis properties of CNT FET devices with Al-ZrHfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> high-k. The arrows indicate the directions of I<sub>DS</sub>. (b) Change in hysteresis loop characteristics in ambient and vacuum (~10 mT) condition for each device.</div>

Journal of Nanomaterials

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Figure 4

Figure 4: Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO<sub>2</sub> Gate Dielectric 

Journal of Nanomaterials

Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric

Figure 4

Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO₂ Gate Dielectric