Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO<sub>2</sub> Gate Dielectric

<div>Memory endurance properties of Al-ZrHfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> CNT devices during 90 cycling test. On/off current was read at V<sub>BG</sub> = 1 V and V<sub>DS</sub> = −1 V.</div>

Journal of Nanomaterials

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Figure 5

Figure 5: Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO<sub>2</sub> Gate Dielectric 

Journal of Nanomaterials

Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO2 Gate Dielectric

Figure 5

Low Power Switching Characteristics of CNT Field Effect Transistor Device with Al-Doped ZrHfO₂ Gate Dielectric