Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

Figure 2

(a) Magnetoresistivity (B) at various for sample A. The inset shows the Hall resistivity (B) at = 0.32 K. (b) Magnetoresistivity (B) at various driving currents at fixed = 0.32 K for sample A.

(a)

(b)