Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

Figure 5

(a) Conductance fluctuations in sample B as a function of magnetic field at various with fixed I = 20 nA. The inset shows conductance fluctuations in sample B as a function of magnetic field with various driving currents at fixed = 0.32 K. (b) as a function of () for sample B and at = 0.32 K. The inset shows effective versus driving current in sample B.

(a)

(b)