Research Article
High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method
Figure 6
Drain current ( and ) versus gate voltage (Vg) transfer curves of TFTs with IGZO active layers prepared with different Ga molar ratios in precursor solutions (a) annealed at 500°C for 1 hour, the thickness of SiO2 is 200 nm; (b) annealed at 450°C for 1 hour, the thickness of SiO2 is 30 nm.
| (a) |
| (b) |