High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Table 1

The TFT device performance of the IGZO films prepared with different annealing-time.

Annealing time; (hour)	Mobility; (cm^2V^−1s^−1)	(V)	(A)
0.5	0.25		10^−9
1	0.63	6	10^−9
2	1.3	0	10^−8
4	1		10^−7