High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Table 2

The TFT device performance of the IGZO films prepared with different annealing temperatures.

Annealing temperature; (°C)	Mobility; (cm^2V^−1s^−1)	(V)
340	0.06	20
380	0.32	28
400	0.39	17
420	0.43	15
460	0.56	10
500	3.4	0