Research Article
High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method
Table 3
The TFT device performance of the IGZO films prepared with different Ga molar ratios in precursor solutions.
| | Process condition | Ga() molar ratio
(In : Ga : Zn = 1 : : 1) | Mobility
(cm2V−1s−1) |
(V) |
(A) |
| Case 1
(200 nm, 500°C annealing) | 0.6 | 3 | | N/A | | 0.7 | 3.6 | | 10−8 | | 1.0 | 3.4 | 0 | 10−8 | | 1.2 | 1.4 | 5 | 10−8 |
| Case 2
(30 nm, 450°C annealing) | 0.6 | 3.1 | 0.6 | NA | | 0.7 | 2.4 | 0.9 | 10−9 | | 1.0 | 0.63 | 1 | 10−11 | | 1.2 | 0.64 | 1.2 | 10−11 |
|
|
