Research Article

Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion

Figure 10

Plot of GISAXS intensity in the form versus for the SiO2/Ge 2/2 nm sample, annealed at 800°C and thus containing voids embedded in the SiO2 matrix. For  nm−2 the straight line (to the detector limit for the applied setup) shows the fit from which the thickness of the border region around the voids is calculated. The peak at  nm−2 represents the Bragg peak.