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Journal of Nanomaterials
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2018
/
Article
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Fig 5
/
Research Article
Self-Ordered Voids Formation in SiO
2
Matrix by Ge Outdiffusion
Figure 5
GISAXS intensity parallel to the sample surface taken at
= 0.2 nm
−1
(see two-dimensional GISAXS pattern in Figure
3(b)
) for the annealed film.