Research Article
Self-Ordered Voids Formation in SiO2 Matrix by Ge Outdiffusion
Figure 7
(a) Overview bright-field TEM micrograph of an annealed sample, showing the single-crystal Si substrate at the top, followed by layered voids formed in the amorphous SiO2 thin-film layer. The thickness of the whole thin-film layer at this point is 60 nm. The rectangular region of interest (ROI) was analysed in detail in (b), where STEM-EDS mappings of the fine structures were performed.
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