Optimization of a Hydrothermal Growth Process for Low Resistance 1D Fluorine-Doped Zinc Oxide Nanostructures

Figure 7

SEM images of FZO deposited at different sputtering times, temperatures and reaction times: (a) 10 s, 50°C, 6.5 hours; (b) 15 s, 100°C, 10 hours, and (c) 20 s, 75°C, 3 hours, respectively.

(a)

(b)

(c)