Synthesis of Binary Bi₂S₃/ZnO Nanorod Array Heterostructure and Their Photoelectrochemical Performance

Figure 8

Linear sweep voltammograms obtained at the scan rate of 20 mV s^-1 at applied potentials from -0.5 V to +1.0 V under illumination intensity of 100 mWcm^-2 in 0.1 M Na₂S and Na₂SO₃ electrolyte for (a) bare ZnO NRAs/ITO; Bi₂S₃/ZnO NRAs/ITO at different SILAR cycle numbers: (b) 3 cycles; (c) 5 cycles; (d) 7 cycles; (e) 9 cycles; (f) 11 cycles.

(a)

(b)

(c)

(d)

(e)

(f)