Journal of Nanomaterials / 2019 / Article / Fig 3

Research Article

Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate

Figure 3

STEM and EDS elemental mapping images for (a–d) 950°C-annealed, (e–h) 1050°C-annealed, and (i–l) 1100°C-annealed sample, respectively.

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