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Journal of Nanomaterials
Volume 2019, Article ID 6042026, 9 pages
Research Article

Graphene Quantum Dots-Modified Ternary ZnCdS Semiconductor for Enhancing Photoelectric Properties

1School of Resources and Environmental Engineering, Wuhan University of Technology, Wuhan 430070, China
2Hubei Entry & Exit Inspection and Quarantine Bureau Technology Center, Wuhan 430050, China

Correspondence should be addressed to Yun Lei; nc.ude.tuhw@nuyiel

Received 14 March 2019; Revised 22 April 2019; Accepted 13 May 2019; Published 9 June 2019

Academic Editor: Haisheng Qian

Copyright © 2019 Zicong Jiang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A series of graphene quantum dots-modified ZnCdS (ZnCdS/G) composites with different contents of graphene quantum dots (GQDs) were prepared by a solvothermal route and characterized via various measurements. GQDs have a type graphene height of 2 nm and exhibit an excitation-dependent PL behavior. GQDs-modified ZnCdS composites present good lattice fingers that can be assigned to the (110) plane of GQDs and (112) plane of ZnCdS. The effect of different GQDs contents on the photoelectric property of ZnCdS was investigated. The results show that the photocurrent density of ZnCdS/G first increases and achieves a maximum of 11.4 μA/cm2 with the addition of 0.06 wt% and then decreases as the GQDs content changes from 0.06 wt% to 0.12 wt%. Photocurrent counts as a function of time present a decrease of 10% and remains stable after 1600 s.