Research Article
Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM
Figure 2
Electrical properties: (a) the resistive switching (RS) characteristic of the W/HfO2-/Pt structure and (b) pulse-tested endurance of the device. The set pulse is 4 V/50 μs followed by read pulse of 0.2 V/300 μs, and the reset pulse is 3.5 V/50 μs; (c) the retention test result after set and reset processes at room temperature; (d) statistical results of the SET voltages in the 100 DC cycling sweep process. Read pulse is 0.2 V/300 μs.
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