Research Article
Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM
Figure 3
The demonstrated mechanism of RS performance change made in the W/HfO2-/Pt device: (a) a “dendrite” CF is formed between the TE and the BE, before applying the negative voltage to the device; (b) parts of CF rupture under the negative electrical field; (c) the remaining CFs are fused by generating joule heat; (d) the oxygen vacancy starts migrating to the bottom electrode, during the positive sweep process; (e) the oxygen vacancy connects with the preformed CF branches.
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