Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM

Figure 4

Electrical properties of the device in different voltages and compliance currents (CCs): (a) - curves of CC set at 1 mA and 100 μA, respectively; (b) - curves under different negative ending voltage values; (c) the retention test result after modulating the CC value; (d) the retention test result after modulating the negative ending voltage value (all retention tests are carried out at room temperature).

(a)

(b)

(c)

(d)