Bandgap Engineering of Bilayer Ge/CdS Thin Films via Interlayer Diffusion under Different Annealing Temperatures

<div>(a-d) Grazing incidence XRD pattern showing the peaks of various scatterings from the planes of Ge and CdS crystals. The spectra show the formation of FCC cubic structures of both Ge and CdS. The formation of a new mixed phase Cd<sub>0.7</sub>Ge<sub>0.3</sub>S was also observed at high sintering temperature.</div>

Journal of Nanomaterials

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Figure 1

Figure 1: Bandgap Engineering of Bilayer Ge/CdS Thin Films via Interlayer Diffusion under Different Annealing Temperatures 