Bandgap Engineering of Bilayer Ge/CdS Thin Films via Interlayer Diffusion under Different Annealing Temperatures

Figure 3

SEM images of sintered samples:(a) the as-deposited film, (b) film annealed at 200°C, (c) film annealed at 350°C, and (d) film annealed at 400°C. Different phases of materials are also developing with sintering temperature. The scale corresponding to (a) is 1 μm while to (b) and (c) is 300 nm.

(a)

(b)

(c)

(d)