A Short Review on Verwey Transition in Nanostructured Fe₃O₄ Materials

Figure 10

Schematics of four-point resistance measurement for Fe₃O₄/PMN-PT structure and ferroelastic strain state dependence of resistivity as a function of temperature (a) [4]. Electrical gating of Fe₃O₄ where the dielectric layer consists of PMMA (900 nm)/Al₂O₃ (50 nm)/MgO (10 nm). Temperature dependence of resistance for applied electric fields of +1.8 MV/cm (blue), +0.9 MV/cm (orange), 0 MV/cm (black), −0.9 MV/cm (green), and −1.8 MV/cm (red). The arrows show for each electric field, which is summarized in the inset (b) [51].

(a)

(b)