Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Figure 3

(a) Absorbance and PL spectra for the core CdZnSe QDs and the CdZnSe/ZnSe QDs without and with TBP treatment. (b) PL decay cures for the cation-rich, anion-rich, and the TBP-treated CdZnSe/ZnSe QDs. The photograph’s insets in (a) are for the core CdZnSe QDs (left column) and CdZnSe/ZnSe QDs before (middle column) and after TBP treatment (right column) taken under the sunlight at RT (top row), under the UV radiation at RT (middle row), and under the UV radiation at the temperature of 310°C (bottom row), respectively.

(a)

(b)