Bright Alloy CdZnSe/ZnSe QDs with Nonquenching Photoluminescence at High Temperature and Their Application to Light-Emitting Diodes

Figure 4

(a) Structure diagram and (b) TEM image of the cross-section of the QLED. (c) EL evolution with increasing applied voltage, and the inset is a luminescent image of the device at 6 V. (d) Variation of current density and luminance with applied voltage. (e) Variation of external quantum efficiency and current efficiency with applied voltage.

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