Research Article

Structural Evolution and Photoluminescence of SiO2 Layers with Sn Nanoclusters Formed by Ion Implantation

Figure 2

XTEM images of SiO2 (600 nm)/Si samples implanted with 200 keV Sn+ to a fluence of (a) and (b) and annealed for 60 minutes at 800°С. In the right of each XTEM image, the depth distribution of Sn (given in at.%) is shown as detected by RBS. The arrows in (a) and braces in (b) are there to guide the eyes.
(a)
(b)