Research Article
Structural Evolution and Photoluminescence of SiO2 Layers with Sn Nanoclusters Formed by Ion Implantation
Figure 3
XTEM images of SiO2 (600 nm)/Si samples implanted with 200 keV Sn+ to a fluence of (a) and (b) and annealed in an air atmosphere for 60 minutes at 900°С. In the right of each XTEM image, the depth distribution of Sn (given in at.%) is shown as detected by RBS. The braces are there to guide the eyes.
(a) |
(b) |