Research Article
Structural Evolution and Photoluminescence of SiO2 Layers with Sn Nanoclusters Formed by Ion Implantation
Figure 4
Bright-field (a, d) and dark-field TEM images (c, f) and electron diffraction patterns (b, e) of SiO2 (600 nm)/Si samples implanted with 200 keV Sn+ to a fluence of and annealed at 800 (a, b, c) and 900°C (d, e, f).
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