Comprehensive Study of Kinetics of Processes Competing during PECVD Ultrathin Silicon Layer High-Temperature Annealing

Figure 4

Individual layer and phase reaction to annealing in pure argon at (a) 700°C, (b) 800°C, (c) 900°C, and (d) 1000°C of “thin” PECVD Si layer. PECVD Si layer consists of a-Si, c-Si, and SiO₂ in PECVD Si phases. SiO₂ on top is determined as a separate layer.

(a)

(b)

(c)

(d)